Fabrication and Characterization of Ga-doped ZnO / Si Heterojunction Nanodiodes

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dc.authoridAKSOY AKGUL, FUNDA/0000-0002-9256-4887
dc.contributor.authorAkgul, Guvenc
dc.contributor.authorAkgul, Funda Aksoy
dc.date.accessioned2024-11-07T13:23:56Z
dc.date.available2024-11-07T13:23:56Z
dc.date.issued2017
dc.departmentNiğde Ömer Halisdemir Üniversitesi
dc.description32nd International Physics Congress of Turkish-Physical-Society (TPS) -- SEP 06-09, 2016 -- Bodrum, TURKEY
dc.description.abstractIn this study, temperature-dependent electrical properties of n-type Ga-doped ZnO thin film / p-type Si nanowire heterojunction diodes were reported. Metal-assisted chemical etching (MACE) process was performed to fabricate Si nanowires. Ga-doped ZnO films were then deposited onto nanowires through chemical bath deposition (CBD) technique to build three-dimensional nanowire-based heterojunction diodes. Fabricated devices revealed significant diode characteristics in the temperature range of 220 - 360 K. Electrical measurements shown that diodes had a well-defined rectifying behavior with a good rectification ratio of 10(3) +/- 3 V at room temperature. Ideality factor (n) were changed from 2.2 to 1.2 with increasing temperature.
dc.description.sponsorshipTurkish Phys Soc
dc.description.sponsorshipResearch Projects Unit of Omer Halisdemir University [FEB 2014/25-BAGEP, FEB 2014/26-BAGEP]
dc.description.sponsorshipG.A. and F.A.A. would like to give thanks to Research Projects Unit of Omer Halisdemir University (The Project Code: FEB 2014/25-BAGEP and The Project Code: FEB 2014/26-BAGEP) for the financial support.
dc.identifier.doi10.1063/1.4976470
dc.identifier.isbn978-0-7354-1483-9
dc.identifier.issn0094-243X
dc.identifier.scopus2-s2.0-85016047444
dc.identifier.scopusqualityN/A
dc.identifier.urihttps://doi.org/10.1063/1.4976470
dc.identifier.urihttps://hdl.handle.net/11480/13815
dc.identifier.volume1815
dc.identifier.wosWOS:000435205100126
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAmer Inst Physics
dc.relation.ispartofProceedings of the Turkish Physical Society 32nd International Physics Congress (Tps32)
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241106
dc.titleFabrication and Characterization of Ga-doped ZnO / Si Heterojunction Nanodiodes
dc.typeConference Object

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