Current-voltage characteristics of Ag/TiO2/n-InP/Au Schottky barrier diodes
Küçük Resim Yok
Tarih
2019
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Amer Inst Physics
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The effect of the TiO2 interfacial layer on rectifying junction parameters of Ag/TiO2/n-InP/Au Schottky diodes has been investigated using current-voltage (I-V) measurements in the temperature range of 120-420 K with steps of 20 K. The barrier height is found to be 0.19 eV and 0.68 eV from current-voltage characteristics at 120 K and 420 K, respectively. At 120 K and 420 K, the ideality factor is found to be 3.52 and 1.01 for the Ag/TiO2/n-InP/Au Schottky barrier diode, respectively. These results are gained by the thermionic emission theory at room temperature. Values of series resistances gained from the Cheung-Cheung method are compared with results gained from a modified Norde method. These experimental results indicate that series resistance decreases with an increase in temperature. The current-voltage (I-V) measurements showed that the diode with the TiO2 interfacial layer gave a double Gaussian property in the examined temperature range. The Richardson constant is also calculated from a modified Richardson plot and is found to be very compatible with the theoretical value. Interface state density is also examined by using I-V characteristics.
Açıklama
Anahtar Kelimeler
Metal-Semiconductor Interfaces, Electrical Characteristics, Temperature-Dependence, Height Enhancement, Inp, Contacts, Parameters, Inhomogeneities, Au/Sno2/N-Si, Performance
Kaynak
Journal of Applied Physics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
125
Sayı
3
