Current-voltage characteristics of Ag/TiO2/n-InP/Au Schottky barrier diodes

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dc.contributor.authorBilgili, Ahmet Kursat
dc.contributor.authorGuzel, Tamer
dc.contributor.authorOzer, Metin
dc.date.accessioned2024-11-07T13:32:06Z
dc.date.available2024-11-07T13:32:06Z
dc.date.issued2019
dc.departmentNiğde Ömer Halisdemir Üniversitesi
dc.description.abstractThe effect of the TiO2 interfacial layer on rectifying junction parameters of Ag/TiO2/n-InP/Au Schottky diodes has been investigated using current-voltage (I-V) measurements in the temperature range of 120-420 K with steps of 20 K. The barrier height is found to be 0.19 eV and 0.68 eV from current-voltage characteristics at 120 K and 420 K, respectively. At 120 K and 420 K, the ideality factor is found to be 3.52 and 1.01 for the Ag/TiO2/n-InP/Au Schottky barrier diode, respectively. These results are gained by the thermionic emission theory at room temperature. Values of series resistances gained from the Cheung-Cheung method are compared with results gained from a modified Norde method. These experimental results indicate that series resistance decreases with an increase in temperature. The current-voltage (I-V) measurements showed that the diode with the TiO2 interfacial layer gave a double Gaussian property in the examined temperature range. The Richardson constant is also calculated from a modified Richardson plot and is found to be very compatible with the theoretical value. Interface state density is also examined by using I-V characteristics.
dc.identifier.doi10.1063/1.5064637
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issue3
dc.identifier.scopus2-s2.0-85060131299
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1063/1.5064637
dc.identifier.urihttps://hdl.handle.net/11480/15227
dc.identifier.volume125
dc.identifier.wosWOS:000456264400037
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAmer Inst Physics
dc.relation.ispartofJournal of Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241106
dc.subjectMetal-Semiconductor Interfaces
dc.subjectElectrical Characteristics
dc.subjectTemperature-Dependence
dc.subjectHeight Enhancement
dc.subjectInp
dc.subjectContacts
dc.subjectParameters
dc.subjectInhomogeneities
dc.subjectAu/Sno2/N-Si
dc.subjectPerformance
dc.titleCurrent-voltage characteristics of Ag/TiO2/n-InP/Au Schottky barrier diodes
dc.typeArticle

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