Growth and characterization of Cu2SnS3 (CTS), Cu2SnSe3 (CTSe), and Cu2Sn(S,Se)3 (CTSSe) thin films using dip-coated Cu–Sn precursor

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dc.contributor.authorBayazıt T.
dc.contributor.authorOlgar M.A.
dc.contributor.authorKüçükömeroğlu T.
dc.contributor.authorBacaksız E.
dc.contributor.authorTomakin M.
dc.date.accessioned2019-08-01T13:38:39Z
dc.date.available2019-08-01T13:38:39Z
dc.date.issued2019
dc.departmentNiğde ÖHÜ
dc.description.abstractTernary compounds Cu2SnS3, Cu2SnSe3 and Cu2Sn(S,Se)3 thin films used in thin film solar cell applications were prepared at the first time by such a two-stage process that includes dip-coating of Cu–Sn precursors as distinct from vacuum-based fabrication methods followed by sulfurization/selenization of prepared precursors via rapid thermal processing at 550 °C. All prepared thin films revealed Cu-poor composition. X-ray diffraction and Raman spectra of the samples showed that Cu2SnS3 and Cu2SnSe3 thin films had a monoclinic structure as a dominant phase and additionally some secondary phases such as tetragonal Cu2SnS3 and orthorhombic Cu3SnS4. However, the tetragonal and orthorhombic phases had more impact on Cu2Sn(SSe)3 thin film. Compact, dense, and small grained surface morphologies were obtained for the Cu2SnS3 and Cu2Sn(SSe)3 thin films, while the surface morphology of the Cu2SnSe3 thin film had larger grained surface morphology. The Cu2SnS3 thin film demonstrated higher transmittance (~ 65%) and two different absorption edges that indicates formation of two band gap energy. Band gap values of Cu2SnS3, Cu2Sn(SSe)3 and Cu2SnSe3 thin films were found 0.97 eV (and 1.51 eV), 1.25 eV and 0.78 eV, respectively. The lowest resistivity (2.48 × 10-1 ? cm) and the highest carrier concentration (1.64 × 1019 cm-3) values were observed for Cu2Sn(SSe)3 thin film. © 2019, Springer Science+Business Media, LLC, part of Springer Nature.
dc.description.sponsorshipRecep Tayyip Erdogan Üniversitesi
dc.description.sponsorshipThis work was supported by the research fund of Recep Tayyip Erdogan University, Rize, Turkey, under Contract No. FDK-2018-964
dc.identifier.doi10.1007/s10854-019-01622-4
dc.identifier.endpage12618
dc.identifier.issn0957-4522
dc.identifier.issue13
dc.identifier.scopus2-s2.0-85067065921
dc.identifier.scopusqualityQ2
dc.identifier.startpage12612
dc.identifier.urihttps://dx.doi.org/10.1007/s10854-019-01622-4
dc.identifier.urihttps://hdl.handle.net/11480/1456
dc.identifier.volume30
dc.identifier.wosWOS:000475587800080
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthor[0-Belirlenecek]
dc.language.isoen
dc.publisherSpringer New York LLC
dc.relation.ispartofJournal of Materials Science: Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.titleGrowth and characterization of Cu2SnS3 (CTS), Cu2SnSe3 (CTSe), and Cu2Sn(S,Se)3 (CTSSe) thin films using dip-coated Cu–Sn precursor
dc.typeArticle

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