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    An experimental study on determination of the shottky diode current-voltage characteristic depending on temperature with artificial neural network
    (Elsevier, 2021) Colak, Andac Batur; Guzel, Tamer; Yildiz, Oguzhan; Ozer, Metin
    Shottky diodes are one of the important components of electronic systems. Therefore, it is very important to determine the parameters of the diodes according to the area in which they will be used. One of the most important of these parameters is the current-voltage characteristic of the diode. In this study, firstly, current values of the Schottky diode in the voltage range of -2 V to +3 V are experimentally measured in the temperature range of 100?300 K. In order to estimate the current-voltage characteristic of Shottky diode at different temperatures, a multi-layer perceptron, a feed-forward back-propagation artificial neural network was developed using 362 experimental data obtained. In the artificial neural network where temperature (T) and voltage (V) values are selected as input variables and the hidden layer has 15 neurons, the current (I) value is obtained as output. The results obtained from the artificial neural network have been found to be in good agreement with the experimental data of the Schottky diode.
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    Current-voltage characteristics of Ag/TiO2/n-InP/Au Schottky barrier diodes
    (Amer Inst Physics, 2019) Bilgili, Ahmet Kursat; Guzel, Tamer; Ozer, Metin
    The effect of the TiO2 interfacial layer on rectifying junction parameters of Ag/TiO2/n-InP/Au Schottky diodes has been investigated using current-voltage (I-V) measurements in the temperature range of 120-420 K with steps of 20 K. The barrier height is found to be 0.19 eV and 0.68 eV from current-voltage characteristics at 120 K and 420 K, respectively. At 120 K and 420 K, the ideality factor is found to be 3.52 and 1.01 for the Ag/TiO2/n-InP/Au Schottky barrier diode, respectively. These results are gained by the thermionic emission theory at room temperature. Values of series resistances gained from the Cheung-Cheung method are compared with results gained from a modified Norde method. These experimental results indicate that series resistance decreases with an increase in temperature. The current-voltage (I-V) measurements showed that the diode with the TiO2 interfacial layer gave a double Gaussian property in the examined temperature range. The Richardson constant is also calculated from a modified Richardson plot and is found to be very compatible with the theoretical value. Interface state density is also examined by using I-V characteristics.
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    Investigation of inhomogeneous barrier height for Au/n-type 6H-SiC Schottky diodes in a wide temperature range
    (Academic Press Ltd- Elsevier Science Ltd, 2018) Guzel, Tamer; Bilgili, Ahmet Kursat; Ozer, Metin
    Curent-Voltage (I-V) properties of Au/6H-SiC/Au Schottky diodes are investigated and results are analised dependent on temperature at 80-400 K range. Fundamental parameters such as ideality factors (n), barrier heights (Phi(bo)), saturation currents (I-o) are calculated for this diode. Also, series resistance (R-s) is calculated with different methods. Richardson curves are plotted for this structure and Richardson constant (A*) is calculated. Results are compared with literature. Gaussian distribution is examined by using barrier inhomogeneity. Parameters belonging to Gaussian disribution are calculated and results are compared with previous studies done by different authors.