Al/p-Si/Sn schottky yapılarının akım-voltaj karekteristiklerinin incelenmesi
Küçük Resim Yok
Tarih
2006
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Niğde Üniversitesi
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
Bu çalıºmada, yüksek özdirençli [111] doðrultusunda kesilmiº p-tipi Si kristalindenyapı Al/p-Si/Sn Schottky diyot yapı nı akı iletim mekanizması ve karakteristiklan sı n mparametreleri araºtı ldı Schottky diyot yapı ndaki omik kontak, Al-Si (p-tipi)rı . sıðıolan 577 0C'de alaºı yapısisteminin ötektik sıcaklı m lması ile; doðrultucu kontak iseSn metalinin p-tipi Si'a vakumda ı sal buharlaºtı lması yöntemiyle gerçekleºtirildi.sı rırma iºlemleri 10-5 torr basıBuharlaºtı nçta gerçekleºtirildi.Yapı n akıları m-gerilim (I-V) ölçümleri oda sıcaklı nda, karanlı ortamda yaklaºıðı k kolarak 0-4 Volt aralı nda ters ve düz beslemlerde alı ºtı Yapı ait parametrelerinðı nmı r. yabulunmasında akım-voltaj karakteristikleri kullanı . Diyot parametreleri Cheung veldıCheung tarafından verilen yöntemle hesaplandı Ayrı Schottky diyot yapı nı I-V. ca, sı nmıile Schottky çiziminden eÖ p= 0.73 eV, doðru beslem [dV/dlnIkarakteristikleri yardı]-I ve H(I)-I karakteristiklerinden eÖ p= 0.75 eV deðerleri bulundu. Diyot idealiteçarpanın = 1.64 ile diyot seri direnci Rs=6.45 kΩ ve Rs=8.87 kΩ olarak bulundu.Anahtar sözcükler: Schottky diyot, Silisyum, idealite faktörü, metal-yarıiletken kontak,omik kontak, doðrultucu kontak, yüzey durumları oksit, donor, akseptör.,iiiAcroPDF - A Quality PDF Writer and PDF Converter to create PDF files. To remove the line, buy a license.
In this study Al/p-Si/Sn Schottky diode made of p-type Si Crystal that was cut in the[111] direction of high resistivity and it is parameters characteristics have beenresearched. The ohmic contact in the Schottky diode was fulfilled by making p-type Al-Si alloy at 577 0C which was the eutectic temperature of P+P structure and the was madewith the contact of Sn metal and p-type Si. Evaporation processes was done under thepressure of 10-5 torr.Current-Voltage (I-V) measurements of the sample at room temperature and darkmedium have been taken for the range of approximately 0-4 Volts of forward andreverse bias. So in order to find the parameters relating to the structure thecharacteristics of current-voltage (I-V) were used. The diode parameters have beencalculated by the use of methods given by N.V. Cheung and S.K. Cheung. In addition,by using the I-V characteristics of the Schottky diode structure, eÖ p= 0.73 eV, wasfound from Schottky drawing, and eÖ p= 0.75 eV from [dV/dlnI ]-I and H(I)-Icharacteristics. To the values found, n=1.64 with diode seri resistance Rs=6.45kΩ andRs=8.87 kΩ were found.Key Words: Schottky diode, silicon, ideality factor, metal-semiconductor contacts,ohmic contact, rectifying contact, surface states, oxide, donor, acceptor.ivAcroPDF - A Quality PDF Writer and PDF Converter to create PDF files. To remove the line, buy a license.
In this study Al/p-Si/Sn Schottky diode made of p-type Si Crystal that was cut in the[111] direction of high resistivity and it is parameters characteristics have beenresearched. The ohmic contact in the Schottky diode was fulfilled by making p-type Al-Si alloy at 577 0C which was the eutectic temperature of P+P structure and the was madewith the contact of Sn metal and p-type Si. Evaporation processes was done under thepressure of 10-5 torr.Current-Voltage (I-V) measurements of the sample at room temperature and darkmedium have been taken for the range of approximately 0-4 Volts of forward andreverse bias. So in order to find the parameters relating to the structure thecharacteristics of current-voltage (I-V) were used. The diode parameters have beencalculated by the use of methods given by N.V. Cheung and S.K. Cheung. In addition,by using the I-V characteristics of the Schottky diode structure, eÖ p= 0.73 eV, wasfound from Schottky drawing, and eÖ p= 0.75 eV from [dV/dlnI ]-I and H(I)-Icharacteristics. To the values found, n=1.64 with diode seri resistance Rs=6.45kΩ andRs=8.87 kΩ were found.Key Words: Schottky diode, silicon, ideality factor, metal-semiconductor contacts,ohmic contact, rectifying contact, surface states, oxide, donor, acceptor.ivAcroPDF - A Quality PDF Writer and PDF Converter to create PDF files. To remove the line, buy a license.
Açıklama
Fen Bilimleri Enstitüsü
Anahtar Kelimeler
Fizik ve Fizik Mühendisliği, Physics and Physics Engineering
