Effect of $SnCl_2$ heat treatment on SnS thin films deposited by RF sputtering

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dc.contributor.authorÇiriş, Ali
dc.date.accessioned2024-11-07T13:16:45Z
dc.date.available2024-11-07T13:16:45Z
dc.date.issued2023
dc.departmentNiğde Ömer Halisdemir Üniversitesi
dc.description.abstractIn this study, the effect of $SnCl_2$ treatment on SnS thin films was investigated. SnS thin films were grown by RF sputtering and $SnCl_2$ treatment was applied by wet chemical processing. While the samples grouped as $SnCl_2$ heat treated and annealed were subjected to annealing in air atm, the as-deposited sample was not applied any annealing process. The as-deposited sample grew in the orthorhombic SnS phase. Annealing of the SnS sample in air environment led to the formation of orthorhombic SnS as well as non-dominant $SnCl_2$ and $SnCl_2$ phases. It was found that applying $SnCl_2$ heat treatment to SnS deteriorated the crystallization and especially the $SnO_2$ oxide phase became more dominant. Raman spectra confirmed the presence of SnS and SnS2 phases in the samples, but no evidence of $SnO_2$ phase was found. SEM images showed bladelike, dense grain formation in the as-deposited and annealed samples. However, $SnCl_2$ heat treatment completely changed the surface morphology of the sample, causing it to transform into a structure consisting of several domains split by deep fractures. EDS revealed a distinct Sn-rich composition of the as-deposited and annealed samples (Sn/S~1.2). On the other hand, $SnCl_2$ heat treatment caused a massive loss of sulphur in the atomic distribution of the SnS and it was seen that the Sn/S ratio increased to around 7.5. The band gaps of the as-deposited and annelaed samples were calculated as 1.43 eV and 1.45, respectively. However, $SnCl_2$ heat treatment led to an increase to 1.56 eV of the band gap. Analysis results show that $SnCl_2$ treatment by the wet processing causes a significant change on the characteristics of SnS thin film. In this context, it can be said that $SnCl_2$ heat treatment can be further improved with optimization processes.
dc.identifier.doi10.28948/ngumuh.1269037
dc.identifier.endpage964
dc.identifier.issn2564-6605
dc.identifier.issue3
dc.identifier.startpage957
dc.identifier.trdizinid1188239
dc.identifier.urihttps://doi.org/10.28948/ngumuh.1269037
dc.identifier.urihttps://search.trdizin.gov.tr/tr/yayin/detay/1188239
dc.identifier.urihttps://hdl.handle.net/11480/12549
dc.identifier.volume12
dc.indekslendigikaynakTR-Dizin
dc.language.isoen
dc.relation.ispartofNiğde Ömer Halisdemir Üniversitesi Mühendislik Bilimleri Dergisi
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_20241107
dc.subjectNanobilim ve Nanoteknoloji
dc.subjectKimya
dc.subjectUygulamalı
dc.subjectMalzeme Bilimleri
dc.subjectÖzellik ve Test
dc.subjectÇevre Bilimleri
dc.subjectMühendislik
dc.subjectKimya
dc.subjectRF sputtering
dc.subjectSnS
dc.subjectair annealing
dc.subject$SnCl_2$ treatment
dc.titleEffect of $SnCl_2$ heat treatment on SnS thin films deposited by RF sputtering
dc.typeArticle

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