n-InP yarıiletkeni üzerine schottky diyotunun yapımı, diyotun akım-voltaj ve kapasitans-voltaj özeliklerinin incelenmesi
Küçük Resim Yok
Tarih
2006
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Niğde Üniversitesi
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
Bu çalışmada, birkaç n-InP Schottky diyotu yapıldı. Bu diyotların performansınıbelirlemek için I-V ve C-V ölçümleri kullanıldı. n-InP numunelerin mat yüzeyi üzerin 2adet ohmik kontak yapıldı. Bu işlemden sonra, Schottky kontaklar yapılmadan önce n-InP numunelerin temizlendi ve yakıldı. Daha sonra, bu numuneler 10-7 torr' luk vakumsistemin içine yerleştirildi ve numunenin parlak kısmına kalaylama yöntemi ile gümüşnoktalar yerleştirerek, 2 adet Schottky kontak yapıldı. Yapılan her Schottky diyot TO-5transistör başlığı üzerine monte edildi. Bu Schottky diyotların I-V ve C-V ölçümleriyapıldı. Her diyotun I-V ve C-V verileri tartışıldı. Schottky diyotun elektrikselözelikleri, belirgin bir şekilde numunelerin yüzey temizliklerine bağlı olduğu bulundu.Anahtar Kelimeler: n-InP, Ohmik kontak, Schottky diyot, ince film, I-V ve C-Völçümleri, metal-yarıiletken kontakları.
In this work, several InP Schottky diodes were developed and I-V and C-Vmeasurements were performed to determine the performance of these diodes. Twoohmic contacts were made on the substrate of n-InP samples. After this process, n-InPsample substrates were cleaned and etched before formation of the Schottky contacts.Then, these samples were placed in a vacuum system at 10-7 torr and two Schottkycontacts were developed on the samples evaporating the silver dots on their shiny parts.Each fabricated Schottky diode was mounted on a TO-5 transistor header. I-V and C-Vmeasurements of these Schottky diodes were carried out. I-V and C-V spectra of eachdiode were discussed. It is found that the electrical properties of a Schottky diodesignificantly depend on the cleanlines of the surface of the samples.Key_words : n-InP, Ohmic contact, Schottky diode, thin film, I-V and C-Vmeasurements, metal-semiconductor contacts.
In this work, several InP Schottky diodes were developed and I-V and C-Vmeasurements were performed to determine the performance of these diodes. Twoohmic contacts were made on the substrate of n-InP samples. After this process, n-InPsample substrates were cleaned and etched before formation of the Schottky contacts.Then, these samples were placed in a vacuum system at 10-7 torr and two Schottkycontacts were developed on the samples evaporating the silver dots on their shiny parts.Each fabricated Schottky diode was mounted on a TO-5 transistor header. I-V and C-Vmeasurements of these Schottky diodes were carried out. I-V and C-V spectra of eachdiode were discussed. It is found that the electrical properties of a Schottky diodesignificantly depend on the cleanlines of the surface of the samples.Key_words : n-InP, Ohmic contact, Schottky diode, thin film, I-V and C-Vmeasurements, metal-semiconductor contacts.
Açıklama
Fen Bilimleri Enstitüsü, Fizik Ana Bilim Dalı
Anahtar Kelimeler
Fizik ve Fizik Mühendisliği, Physics and Physics Engineering
