Growth of Cu2ZnSnS4 Thin Films Using Moderate Annealing Temperature and Short Dwell Time
Küçük Resim Yok
Tarih
2019
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
In this study CZTS thin films were fabricated by a two-stage process that sputter deposition of metallic Cu, Zn, and Sn on Mo coated glass substrates and annealing process at 500 °C using various short dwell times (4, 8, and 12 min) using Rapid Thermal Processing (RTP) approach. The X-ray diffraction (XRD), Raman spectroscopy, Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Spectroscopy (EDX), and photoluminescence were employed to characterize the CZTS samples synthesized employing different sulfurization times. It was observed that all CZTS thin films showed Cu-poor and Zn-rich composition according to EDX results. XRD patterns displayed formation of kesterite CZTS and CuS secondary phases. Raman spectra of the films justified formation of kesterite CZTS phase for all CZTS thin films and formation of CTS phase, which is difficult to distinguish by XRD pattern of the films for CZTS-8 and CZTS-12 samples. SEM images of the films displayed dense, void-free, and inhomogeneous surface structure regardless of the sulfurization time. The optical band gap of the films as determined by photoluminescence was found to be about 1.36-1.37 eV.
Açıklama
Anahtar Kelimeler
Nanobilim ve Nanoteknoloji, Spektroskopi, Mühendislik, Kimya, Malzeme Bilimleri, Seramik
Kaynak
Cumhuriyet Science Journal
WoS Q Değeri
Scopus Q Değeri
Cilt
40
Sayı
3
