Growth of Cu2ZnSnS4 Thin Films Using Moderate Annealing Temperature and Short Dwell Time

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dc.contributor.authorOlğar, Mehmet Ali
dc.contributor.authorSeyhan, Ayşe
dc.date.accessioned2024-11-07T13:16:04Z
dc.date.available2024-11-07T13:16:04Z
dc.date.issued2019
dc.departmentNiğde Ömer Halisdemir Üniversitesi
dc.description.abstractIn this study CZTS thin films were fabricated by a two-stage process that sputter deposition of metallic Cu, Zn, and Sn on Mo coated glass substrates and annealing process at 500 °C using various short dwell times (4, 8, and 12 min) using Rapid Thermal Processing (RTP) approach. The X-ray diffraction (XRD), Raman spectroscopy, Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Spectroscopy (EDX), and photoluminescence were employed to characterize the CZTS samples synthesized employing different sulfurization times. It was observed that all CZTS thin films showed Cu-poor and Zn-rich composition according to EDX results. XRD patterns displayed formation of kesterite CZTS and CuS secondary phases. Raman spectra of the films justified formation of kesterite CZTS phase for all CZTS thin films and formation of CTS phase, which is difficult to distinguish by XRD pattern of the films for CZTS-8 and CZTS-12 samples. SEM images of the films displayed dense, void-free, and inhomogeneous surface structure regardless of the sulfurization time. The optical band gap of the films as determined by photoluminescence was found to be about 1.36-1.37 eV.
dc.identifier.doi10.17776/csj.527260
dc.identifier.endpage562
dc.identifier.issn2587-2680
dc.identifier.issn2587-246X
dc.identifier.issue3
dc.identifier.startpage554
dc.identifier.trdizinid320216
dc.identifier.urihttps://doi.org/10.17776/csj.527260
dc.identifier.urihttps://search.trdizin.gov.tr/tr/yayin/detay/320216
dc.identifier.urihttps://hdl.handle.net/11480/12048
dc.identifier.volume40
dc.indekslendigikaynakTR-Dizin
dc.language.isoen
dc.relation.ispartofCumhuriyet Science Journal
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_20241107
dc.subjectNanobilim ve Nanoteknoloji
dc.subjectSpektroskopi
dc.subjectMühendislik
dc.subjectKimya
dc.subjectMalzeme Bilimleri
dc.subjectSeramik
dc.titleGrowth of Cu2ZnSnS4 Thin Films Using Moderate Annealing Temperature and Short Dwell Time
dc.typeArticle

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